Characterization of metal oxide semiconductor field effect transistor dosimeters for application in clinical mammography

Medical Physics

Volumn 33, Issue 2, 2006, Pages 514-520

  Benevides, Luis A ^a   Hintenlang, David E ^b  

^a Naval Dosimetry Center   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; POWER MOSFET; TRANSISTORS; X RAY DETECTORS; X RAYS;

ACCURATE MEASUREMENT; AVERAGE GLANDULAR DOSE; CLINICAL APPLICATION; CLINICAL MAMMOGRAPHY; ENERGY DEPENDENCE; MODEL SENSITIVITY; REPRODUCIBILITIES; ULTRA-HIGH-SENSITIVITY;

DOSIMETERS;

METAL OXIDE; MOLYBDENUM; RHODIUM;

AIR; ARTICLE; DOSIMETER; ELECTRIC FIELD; ENERGY; MAMMOGRAPHY; MEDICAL DOCUMENTATION; POWER SUPPLY; PRIORITY JOURNAL; RADIATION DOSE; RADIATION EXPOSURE; RADIATION FIELD; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY ANALYSIS; TREATMENT PLANNING; X RAY;

EID: 31844434014     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.2150779     Document Type: Article

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