First-principles calculations of the electronic band structure of In 4Sn 3O 12 and In 5 SnSbO 12

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Ren, Chung Yuan ^a   Chiou, Shan Haw ^b   Choisnet, J ^c  

^a UNIVERSITY OF TAIPEI   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC BAND STRUCTURE; GRADIENT APPROXIMATION; PROJECTOR AUGMENTED WAVE METHODS;

APPROXIMATION THEORY; BAND STRUCTURE; BINDING ENERGY; CONDUCTIVE MATERIALS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; POSITIVE IONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING ANTIMONY;

INDIUM COMPOUNDS;

EID: 31644444957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2163017     Document Type: Article

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