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Volumn 288, Issue 1, 2006, Pages 36-39

Infrared absorption and current-voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (1 1 1)A substrate grown by solid source molecular beam epitaxy

(6) Li, H a Mei, T a Zhang, D H a Fan, W J a Yoon, S F a Loke, W K a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

A1. I V characterization; A1. Intersubband transition; B1. (1 1 1)A; B1. GaAs AlGAs

Indexed keywords

CRYSTAL GROWTH; CRYSTAL SYMMETRY; CURRENT VOLTAGE CHARACTERISTICS; INFRARED RADIATION; LIGHT ABSORPTION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

(1 1 1)A; GAAS/ALGAS; I-V CHARACTERIZATION; INTERSUBBAND TRANSITION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 31644434024 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.038 Document Type: Conference Paper

Times cited : (2)

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