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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 34-38

Limit of electron mobility in AlGaAs/GaAs modulation-doped heterostructures

(3) Saku, Tadashi a Horikoshi, Yoshiji a Tokura, Yasuhiro a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

AlGaAs GaAs; Electron mobility; Interface roughness; MBE; Modulation doped heterostructure; Scattering

Indexed keywords

ANISOTROPY; CALCULATIONS; CARRIER CONCENTRATION; ELECTRON SCATTERING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ELECTRON MOBILITY; INTERFACE ROUGHNESS; MODULATION DOPED HETEROSTRUCTURES; RESIDUAL IMPURITY FREE LIMIT; SPATIALLY SEPARATED IONIZED DONORS;

HETEROJUNCTIONS;

EID: 0029733767 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.35.34 Document Type: Article

Times cited : (55)

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