Growth, optical and structural characterization of layered GaS films prepared by reactive RF sputtering method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4780-4783

  Ohyama, Masanori ^a   Ito, Hiroshi ^a   Takeuchi, Manabu ^b  

^a TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

Author keywords

Crystal growth; GaS; III VI compound Semiconductors; Layered structure; Optical absorption spectra; Rf reactive magnetron sputtering; Thin film

Indexed keywords

CRYSTAL GROWTH; HYDROGEN; LIGHT ABSORPTION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SILICA; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

III-IV COMPOUND SEMICONDUCTORS; LAYERED STRUCTURE; RF REACTIVE MAGNETRON SPUTTERING;

GALLIUM COMPOUNDS;

EID: 31544438824     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4780     Document Type: Article

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