Epitaxial growth and characterization of GaS x Se 1-x layered compound semiconductor by molecular beam epitaxy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 518-522

  Budiman, Maman ^a   Okamoto, Tamotsu ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaS x Se 1 x; GaSe; Heterostructure; III VI compound semiconductors; Layered materials

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SUBSTRATES;

GROWTH TEMPERATURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031548745     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80135-3     Document Type: Article

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