Maskless fabrication of JFETs via focused ion beams

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1833-1836

  De Marco, Anthony J ^a   Melngailis, John ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Focused ion beam; Graded doping profile; JFET

Indexed keywords

ION BEAMS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY;

FOCUSSED ION BEAM (FIB) TECHNIQUES; GAS-ASSISTED ETCHING (GAE); GRADED DOPING PROFILE; LIQUID METAL ION SOURCES (LMIS);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 3142767096     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.022     Document Type: Conference Paper

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