Horizontal current bipolar transistor (HCBT): A new concept of silicon bipolar transistor technology

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2551-2554

  Biljanovic P ^a   Suligoj, T ^a  

^a UNIVERSITY OF ZAGREB   (Croatia)

Author keywords

Bipolar; HCBT; Horizontal; Lateral; Self aligned

Indexed keywords

BORON; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ION IMPLANTATION; OXIDATION; PHOSPHORUS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON NITRIDE; SURFACES;

HORIZONTAL CURRENT BIPOLAR TRANSISTOR; SILICON BIPOLAR TRANSISTOR TECHNOLOGY; SINGLE POLYSILICON LAYER; VERTICAL CURRENT DEVICES;

BIPOLAR TRANSISTORS;

EID: 0035505631     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960381     Document Type: Article

References (8)

1. Deep submicrometer super self-aligned Si bipolar technology with 25.4 ps ECL
2. Advanced process device technology for 0.3-μm high-performance bipolar LSI's
3. A very small bipolar transistor technology with sidewall polycide base electrode for ECL-CMOS LSI's
4. Silicon bipolar device structures for digital applications: Technology trends and future directions
5. Power gain in feedback amplifiers