A novel method of fabricating integrated FETs for MEMS applications

Journal of Microelectromechanical Systems

Volumn 13, Issue 3, 2004, Pages 500-504

  Draper, Bruce L ^a   Okandan, Murat ^a   Mani, Seethambal S ^a   Bennett, R S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; MASKS; MICROELECTROMECHANICAL DEVICES; MICROSENSORS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES;

DOPANT DIFFUSIONS; GATE ELECTRODES; MICROELECTROMECHANICAL SYSTEMS;

MOSFET DEVICES;

EID: 3142754887     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2004.828735     Document Type: Article

References (6)

1. J. Smith et al., "Embedded micromechanical devices for the monolithic integration of MEMS with CMOS," in Proc. IEDM Tech. Dig., Dec. 1995, pp. 609-612.
2. W. Kuehnel and S. Sherman, "A surface micromachined silicon accelerometer with on-chip detection circuitry," Sens. Actuators, Phys. A, vol. 45, no. 1, pp. 7-16, 1994.
3. W. Yun et al., "surface micromachined, digitally force-balanced accelerometer with integrated CMOS detection circuitry," in Proc. 1992 IEEE Solid-State Sensor and Actuator Workshop, 1992, p. 126.
4. R. Bennet and B. Draper, "Monolithic Integration of a MOSFET with a MEMS Device," U.S. Pat. 6 531 331.
5. J. Sniegowski et al., "Multi-layer enhancement to polysilicon surface-micromachining technology," in Proc. IEDM Tech. Dig., Dec. 1997, pp. 903-906.
6. M. Shaneyfelt et al., "Challenges in hardening technologies using shallow trench isolation," IEEE Trans. Nucl. Sci., vol. 45, pp. 2584-2592, Dec. 1998.