Nonuniform reactive ion etching of MnAs/GaAs heterostructures: MnAs nanodots and GaAs nanocolumns

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2791-2792

  Takagaki, Yukihiko ^a   Wiebicke, Edith ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Gallium arsenide; Manganese arsenide; Nanocolumns; Nanodots; Reactive ion etching; Self organized

Indexed keywords

ELECTRIC RESISTANCE; NANOSTRUCTURED MATERIALS; PHOTORESISTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

ISLAND FORMATION; PATTERN TRANSFER; SPINTRONICS;

HETEROJUNCTIONS;

EID: 3142747649     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2791     Document Type: Article

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