Pt/BaxSr(1-x)TiO3/Pt capacitor technology for 0.15 μm embedded dynamic random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2457-2461

  Tsunemine, Yoshikazu ^a   Okudaira, Tomonori ^a   Kashihara, Keiichiro ^a   Yutani, Akie ^a   Shinkawata, Hiroki ^a   Mazumder, Motaharul Kabir ^a   Ohno, Yoshikazu ^a   Yoneda, Masahiro ^a   Okuno, Yasutoshi ^b   Tsuzumitani, Akihiko ^b   Ogawa, Hisashi ^b   Mori, Yoshihiro ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

BST; Capacitors; Dielectrics; Leakage current; MIM; Perovskite oxides; Platinum

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DEGRADATION; LEAKAGE CURRENTS; METALLIZING; OXYGEN; PERMITTIVITY; PEROVSKITE;

BARIUM STRONTIUM TITANATE (BST); METAL NITRIDES; TEST ELEMENT GROUP (TEG);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 3142741749     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2457     Document Type: Article

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