Perpendicular electron transport in GaAs/AIGaAs multiple quantum wells studied by junction space charge techniques

Semiconductor Science and Technology

Volumn 11, Issue 11, 1996, Pages 1672-1677

  Jia, Y B ^a   Grimmeiss, H G ^a   Han, Z Y ^a,c   Dobaczewski, L ^b  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUTE OF PHYSICS   (Poland)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; EXPERIMENTS; HETEROJUNCTIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

JUNCTION SPACE CHARGE TECHNIQUE; MULTIPLE QUANTUM WELLS; PERPENDICULAR ELECTRON TRANSPORT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030288620     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11/006     Document Type: Article

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