Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry

Computational Materials Science

Volumn 30, Issue 3-4 SPEC. ISS., 2004, Pages 371-375

  Huang, M ^a   Feng, Y P ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Electronic property; First principles; IV V alloy; Silicon phosphide

Indexed keywords

APPROXIMATION THEORY; ELECTRONIC EQUIPMENT; OPTIMIZATION; PARAMETER ESTIMATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS;

GENERALIZED GRADIENT APPROXIMATION (GGA); LOCAL DENSITY APPROXIMATION (LDA); SILICON PHOSPHIDE;

SILICON COMPOUNDS;

EID: 3142664033     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.02.031     Document Type: Conference Paper

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