AlGaAs/InGaAs DFB laser by one-time selective MOCVD growth on a grating substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2019-2022

  Takasuka, Yasuyuki ^a,b   Tsuji, Yasuhide ^c   Yonei, Kenji ^b   Yamauchi, Hiromi ^a   Ogura, Mutsuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Distributed feedback (DFB) laser; Gain coupling; One time selective metalorganic chemical vapor deposition (MOCVD); Quantum wire (QWR); V groove grating

Indexed keywords

ALUMINUM; ARSENIC; COUPLED CIRCUITS; DIFFRACTION GRATINGS; ELECTRON BEAM LITHOGRAPHY; GALLIUM COMPOUNDS; LIGHT MODULATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

BRAGG WAAVELENGTH; GAIN COUPLING; ONE-TIME SELECTIVE METALORGANIC CHEMICAL VAPOR DEPOSITION; V GROOVE GRATING;

DISTRIBUTED FEEDBACK LASERS;

EID: 3142643140     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2019     Document Type: Conference Paper

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