Effect of high-resistivity Si substrate on antenna transmission gain for on-chip wireless interconnects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2297-2301

  Watanabe, Shinji ^a   Rashid, A B M H U ^b   Kikkawa, Takamaro ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

High resistivity Si substrate; Integrated antennas; Transmission gain; ULSI; Wireless interconnects

Indexed keywords

CALIBRATION; CARRIER COMMUNICATION; CLOCKS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; DIPOLE ANTENNAS; ELECTRIC CONDUCTIVITY; ELECTRIC CONNECTORS; ELECTROMAGNETIC WAVES; ELECTRON BEAM LITHOGRAPHY; PERMITTIVITY; PROBES; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMITTERS; ULSI CIRCUITS;

HIGH-RESISTIVITY SILICON SUBSTRATES; INTEGRATED ANTENNAS; TRANSMISSION GAIN; WIRELESS INTERCONNECTS;

WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 3142609246     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2297     Document Type: Conference Paper

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