Au/GaAs magnetoresistive-switch-effect devices fabricated by wet etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2101-2103

  Sun, Zhi Gang ^a   Mizuguchi, Masaki ^a   Akinaga, Hiroyuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Magnetoresistance; Magnetoresistive switch effect; Wet etching

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODEPOSITION; ETCHING; HYSTERESIS; ION BEAMS; LITHOGRAPHY; MAGNETIC FIELDS; SATURATION (MATERIALS COMPOSITION); SUBSTRATES; SURFACE ROUGHNESS;

BALLISTIC MAGNETORESISTANCE (BMR); MAGNETORESISTIVE-SWITCH EFFECTS; TUNNELING MAGNETORESISTANCE (TMR); WET ETCHING;

MAGNETORESISTANCE;

EID: 3142607185     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2101     Document Type: Conference Paper

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