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Volumn , Issue , 2003, Pages 35-36
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Silicon Nitride Trap Memory with Double Tunnel Junction
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTALLIZATION;
NANOSTRUCTURED MATERIALS;
SILICON NITRIDE;
TUNNEL JUNCTIONS;
SIGNAL CHARGES;
NONVOLATILE STORAGE;
SILICON NITRIDE;
DOUBLE TUNNELS;
DOUBLE-TUNNEL JUNCTIONS;
FUTURE MEMORY;
HIGH SPEED;
NANO-CRYSTALLINE LAYERS;
SIGNAL CHARGE;
TRAP MEMORY;
TUNNEL OXIDES;
ULTRA-THIN;
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EID: 0141426840
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (3)
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