Depth profile analysis of structures in ArF resists by 172nm VUV curing and dry etching process using μ-FTIR with gradient shaving preparation

Journal of Photopolymer Science and Technology

Volumn 17, Issue 4, 2004, Pages 535-540

  Okumura, Haruki ^a   Takeda, Kazuhiro ^b   Nagai, Naoto ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

ArF process; Depth profiling; Dry etching; Gradient shaving preparation; Photoresist; VUV curing

Indexed keywords

CARBOXYLIC ACID; LACTONE;

ARGON FLUORIDE LITHOGRAPHY; ARTICLE; INFRARED SPECTROSCOPY; MEASUREMENT; STRUCTURE ANALYSIS; SURFACE PROPERTY; TECHNOLOGY; THICKNESS;

EID: 3142543738     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.17.535     Document Type: Article

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