Improvement in 193 nm photoresists performance by 172 nm VUV curing

Journal of Photopolymer Science and Technology

Volumn 16, Issue 4, 2003, Pages 511-516

  Takeda, Kazuhiro ^a   Asahara, Hirokazu ^a,d   Hanawa, Tetsurou ^a,e   Tsujita, Kouichirou ^a   Okumura, Haruki ^b   Hishinuma, Nobuyuki ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TORAY RESEARCH CENTER INC   (Japan)

^c USHIO INC   (Japan)

^d ROHM CO LTD   (Japan)

^e RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

172nm VUV Curing; Dry etch resistance; Film shrinkage; Gradient shaving preparation; Methacrylate based ArF resist; U FT IR

Indexed keywords

LACTONE DERIVATIVE; METHACRYLIC ACID; NORBORNANE LACTONE; POLYMER; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; FILM; INFRARED SPECTROMETRY; IRRADIATION; RADIOLYSIS;

EID: 0038507236     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.16.511     Document Type: Article

References (5)

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2. G. Becker, M. Ross, S. Wong, J. Minter, T. Marlowe and W.R. Livesay," A Comparative Study of Resist Stabilization Techniques for Metal Etching Processing", Proc. SPIE, vol. 3678, 1999, 1126.
3. Y. Takasu, T. Ohkuma, and Y. Todokoro, Proc. 6th Symp. On Dry Process, Tokyo, The Institute of Electrical Engineers of Japan, 1984, 60.
4. I. Okabe, "Examination of Surface Roughness of ArF Resist after Dry Etching", 9th Symp. of Photoactive Electronic Material, The Society of Polymer Science, Japan, 2000.
5. H. Ashahara, T. Hanawa, W. Wakamiya, N. Endou, T. Arikado, and N. Hishinuma "Improvement in 193nm Photoresists Performance by 172nm VUV Curing", ISSM 2002, Japan, 2002, 203.