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Volumn 20, Issue 3, 2002, Pages 1154-1156
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Passivation of GaAs metal-insulator-semiconductor structures by (NH4)2Sx and by evaporation of SiO2
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIUM COMPOUNDS;
AMORPHOUS MATERIALS;
CALCULATIONS;
CLEANING;
CURRENT DENSITY;
ELECTRIC INSULATING MATERIALS;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRON BEAMS;
EVAPORATION;
FERMI LEVEL;
PASSIVATION;
SILICA;
AMMONIUM POLYSULFIDE;
CAPACITANCE VOLTAGE TECHNIQUE;
ELECTRON BEAM EVAPORATION;
GALLIUM ARSENIDE METAL INSULATOR STRUCTURES;
INTERFACE STATES DENSITY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0036565044
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1463078 Document Type: Article |
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Times cited : (3)
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References (10)
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