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Volumn 43, Issue 4 B, 2004, Pages 2180-2184

Threshold voltage behavior of body-tied finFET (OMEGA MOSFET) with respect to ion implantation conditions

Author keywords

Body; Bulk; Double; FinFET; Gate; MOSFET; Omega; SOI; Tied

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRODES; ETCHING; HEAT LOSSES; ION IMPLANTATION; PHOTOLITHOGRAPHY; PHOTORESISTORS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE;

EID: 3142526663     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2180     Document Type: Conference Paper
Times cited : (3)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.