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Volumn 43, Issue 4 B, 2004, Pages 2180-2184
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Threshold voltage behavior of body-tied finFET (OMEGA MOSFET) with respect to ion implantation conditions
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Author keywords
Body; Bulk; Double; FinFET; Gate; MOSFET; Omega; SOI; Tied
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Indexed keywords
CHEMICAL MECHANICAL POLISHING;
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
ELECTRODES;
ETCHING;
HEAT LOSSES;
ION IMPLANTATION;
PHOTOLITHOGRAPHY;
PHOTORESISTORS;
SEMICONDUCTOR DOPING;
SILICON ON INSULATOR TECHNOLOGY;
STATIC RANDOM ACCESS STORAGE;
BODY;
FINFET;
GATE;
OMEGA;
TIED;
MOSFET DEVICES;
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EID: 3142526663
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.2180 Document Type: Conference Paper |
Times cited : (3)
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References (10)
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