Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1477-1480

  Teraguchi, N ^a   Suzuki, A ^a   Nanishi, Y ^b  

^a SHARP CORPORATION   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

AIGaN; GaGdN; RF MBE; SiC

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE; CATHODOLUMINESCENCE; ENERGY GAP; POSITIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS;

AIGAN; ALLOY SEMICONDUCTORS; BAND-EDGE EMISSIONS; EPITAXIALLY GROWN; GAGDN; SHARP EMISSION; SIC SUBSTRATES; WURTZITE STRUCTURE; BAND-EDGE EMISSION;

GADOLINIUM ALLOYS; SILICON CARBIDE;

EID: 10444223775     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1477     Document Type: Conference Paper

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