Numerical discretization of energy-transport model for semiconductor using high-order compact schemes

Applied Mathematics Letters

Volumn 15, Issue 6, 2002, Pages 721-726

  Fournie M ^a  

^a INSTITUT DE MATHÉMATIQUES DE TOULOUSE   (France)

Author keywords

High order compact schemes; Parabolic band structure; Semiconductors

Indexed keywords

EID: 31244437149     PISSN: 08939659     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0893-9659(02)00033-2     Document Type: Article

References (15)

1. R. Stratton, Diffusion of hot and cold electrons in semiconductor barriers, Phys. Rev. 126, 2002-2014, (1962).
2. P. Degond, S. Génieys and A. Jüngel, A steady-state system in nonequilibrium thermodynamics including thermal and electrical effects, Math. Meth. Appl. Sci. 21, 1399-1413, (1998).
3. N. Ben Abdallah, L. Desvillettes and S. Génieys, On the convergence of the Boltzmann equation for semi-conductors towards an energy transport model, J. Stat. Phys., (1998).
4. N. Ben Abdallah, P. Degond and S. Génieys, An energy-transport model for semiconductors derived from Boltzmann equation, J. Stat. Phys. 84, 205-231, (1997).
5. N. Ben Abdallah and P. Degond, On a hierarchy of macroscopic models for semiconductors, J. Math. Phys. 37, 3308-3333, (1996).
6. W.V. Van Roosbroeck, Theory of flow electrons and holes in germanium and other semiconductors, Bell Syst. Tech. J. 29, 650-607, (1950).
7. A.M. Anile and S. Pennisi, Thermodynamic derivation of the hydrodynamic model for charge transport in semiconductors, Phys. Rev. B. 46, 13186-13193, (1992).
8. D. Chen, E. Kan, U. Ravaioli, C. Shur and R. Dutton, An improved energy transport model including nonparabolicity and non-maxwellian distribution effects, IEEE Electr. Dey. Letters. 13, 26-28, (1992).
9. W.F. Spotz and G.F. Carey, High-order compact scheme for steady stream-function vorticity equations, Int. J. Numer. Methods Eng. 38, 497-3512, (1995).
10. M. Fournié, High order conservative difference methods for 2D drift-diffusion model on non-uniform grid, Appl. Numer. Math. 33, 381-392, (2000).
11. M. Fournié and P. Pietra, Numerical simulation of 2D semiconductor devices using high-order conservative finite difference methods, Report 1132, Instiuto Di Analisi Numerica del CNR, Pavia, Italy, (1999).
12. Y. Apanavich, E. Lyumkis, B. Posky, A. Shur and P. Blakey, Steady-state and transient analysis of submicron devices using energy-balance and simplified hydrodynamic models, IEEE Trans. CAD of Integ. Circuits Syst. 13, 702-711, (1994).
13. A. Marroco, P. Montarnal and B. Perthame, Simulation of the energy-transport and simplified hydrodynamic models for semiconductor devices using mixed finite elements, In Proceedings ECCOMAS, Volume 96, John Wiley, London, (1996).
14. K. Souissi, F. Odeh, H. Tang and A. Gnudi, Comparative studies of hydrodynamic and energy transport model, COMPEL. 13, 439-453, (1994).
15. P. Degond, A. Jüngel and P. Pietra, Numerical discretization of energy-transport models for semiconductors with non-parabolic band structure, SIAM J. Sci. Comp. 22, 986-1007, (2000).