Fabrication of a nanosized current-driven spin valve device using proximity correction in electron-beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 339-343

  Yi, Hyunjung ^a   Nguyen, T H Y ^a   Chang, Joonyeon ^a   Shin, K H ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRON BEAM LITHOGRAPHY; ETCHING; MULTILAYERS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR JUNCTIONS;

CURRENT-DRIVEN SPIN-VALVE DEVICES; ELECTRON-BEAM RESIST;

ELECTRON TUBES;

EID: 31144454838     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1861031     Document Type: Conference Paper

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