Ideal delta doping of carbon in GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 267-270

  Winking, L ^a   Wenderoth, M ^a   Reusch, T C G ^a   Ulbrich, R G ^a   Wilbrandt, P J ^a   Kirchheim, R ^a   Malzer, S ^b   Dohler G ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; MOLECULAR BEAM EPITAXY; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

CROSS-SECTIONAL CONFIGURATION; DELTA DOPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 31144450759     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1856465     Document Type: Article

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