Treatment of interface roughness in SOI-MESFETs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2110-2112

  Khan, T ^a   Vasileska, D ^a   Thornton, T J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE ROUGHNESS; NEAREST ELEMENT CENTER (NEC) METHOD; QUANTUM-MECHANICAL TUNNELING; SOI-MESFETS;

BOUNDARY CONDITIONS; CAPACITANCE; COMPUTER SIMULATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON MOBILITY; MONTE CARLO METHODS; MOSFET DEVICES; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 4944233251     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1768194     Document Type: Conference Paper

References (7)

1. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 89, 1205 (2001).
2. C. Jacoboni, C. Canali, G. Ottaviani, and A. Quaranta, Solid State Electron 20, 77 (1977).
3. J. T. C. Chen and R. S. Muller, J. Appl. Phys. 45, 828 (1974).
4. C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956).
5. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
6. R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles (McGraw-Hill, Maidenhead, UK, 1981).
7. B. Winstead and U. Ravaioli, 'IEEE Trans. Electron Devices 47, 1241 (2000).