Structure and optical properties of 0.1BiFeO3-0.9SrBi 2Nb2O9 thin films using a modified sol-gel technique

Journal of Sol-Gel Science and Technology

Volumn 37, Issue 1, 2006, Pages 27-30

  Gu, Haoshuang ^a   Chen, Kansong ^a   Hu, Yongming ^a   Zhang, Tianjin ^a   Wang, John ^b  

^a HUBEI UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

BiFeO3 SrBi2Nb2O9 thin films; Optical properties; Sol gel

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BISMUTH COMPOUNDS; OPTICAL PROPERTIES; SOL-GELS; STRONTIUM COMPOUNDS; SYNTHESIS (CHEMICAL);

BIFEO3-SRBI2NB2O9 THIN FILMS; OPTICAL BAND GAP; OPTICAL TRANSITION;

THIN FILMS;

EID: 31044444467     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-005-4889-x     Document Type: Article

References (25)

1. C.A.F. de Araujo, L.D. McMillan, J.D. Cuchiaro, M.C. Scott, and J.F. Scott, Nature 374, 627 (1995).
2. J.F. Scott and C.A.F. de Araujo, Science 246, 1400 (1989).
3. T. Mihara, H. Yoshimori, H. Watanabe, and C.A.F. de Araujo, Jpn. J. Appl. Phys. Part 1 34, 5233 (1995).
4. H.S. Gu, A.X. Kuang, S.M. Wang, D.H. Bao, L.S. Wang, and J.S. Liu, Appl. Phys. Lett. 68(9), 1209 (1996).
5. R. Ramesh, W.K. Chan, B. Wilkens, T. Sands, J.M. Tarascon, V.G. Keramidas, and J.T. Evans, Intergr. Ferroelectrics 1, 1 (1992).
6. J.E Scott, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh (Kluwer, Norwell, MA, 1997), p. 115.
7. J.E Scott, Annu. Rev. Mater. SCi. 28, 79 (1998).
8. P. Duran-Martin, A. Castro, P. Millan, and B. Jimmenez. J. Mater. Res. 13(9), 2565 (1998).
9. Y. Wu and G.Z. Cao, Appl. Phys. Lett. 75, 2650 (1999).
10. S.-Y. Moon, K.S. Choi, K.W. Jung, H. Lee, and D. Jung. Bull. Korean Chem. Soc. 23, 1463 (2002).
11. H.S. Gu, J.M. Xue, and John Wang, Appl. Phys. Lett. 79(13), 2061 (2001).
12. H. S. Gu, TJ. Zhang, J.M. Xue, and J. Wang, Materials Science and Engineering B 99, 116 (2003).
13. X.E Du, and I.W. Chen, J. Am. Ceram. Soc. 81(12), 3265 (1998).
14. Z.G. Zhang, J.S. Liu, Y.N. Wang, J.S. Zhu, F. Yan, X.B. Chen, and H.M. Shen, Appl. Phys. Lett. 73(6), 788 (1998).
15. J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, Appl. Phys. Lett. 76(15), 2937 (2000).
16. S. Bhattacharyya, S.S.N. Bharadwaja, and S.B. Krupanidhi, J. Appl. Phys. 88(7), 4294 (2000).
17. S.M. Zanetti, E.R. Leite, E. Longo, and J. A. Varela, J. Europ. Ceram. Soc. 19, 1409 (1999).
18. Koji Aizawa, Eisuke Tokumitsu, Kojiro Okamoto, and Hiroshi Ishiwara, Appl. Phys. Lett. 76(18), 2609 (2000).
19. D.H. Bao, X. Yao, N. Wakiya, K. Shinozaki, N. Mizutani, Appl. Phys. Lett. 79, 3767 (2001).
20. Y.H. Tong, Y.C. Liu, S.X. Lu, L. Dong, S.J. Chen, and Z.Y. Xiao, J. Sol-Gel Scie. & Tech. 30(3), 157 (2004).
21. H.S. Gu, D.H. Bao, S.M. Wang, D.E Gao, A.X. Kuang, and X.J. Li, Thin Solid Films 283, 81 (1996).
22. H.S. Gu, C. Dong, P.Z. Chen, D.H. Bao, A.X. Kuang, and X.J. Li, J. Crys. Growth. 186, 403 (1998).
23. J.M. Xue, M.H. Sim, S. Ezhilvalavan, and J. Wang, Thin Solid Films 460(1-2), (2004).
24. U. Pal, S. Saha, A.K. Chaudhury, V.V. Rao, and H.D. Banerjee, J. Phys. 022, 965 (1989).
25. G. Hodes, A.A. Yaron, F. Decker, F. Decker, and P. Motisuke, Phys. Rev. B 36, 4215 (1987).