Growth and formation of InGaN and GaN nano-structures studied by STM

e-Journal of Surface Science and Nanotechnology

Volumn 4, Issue , 2006, Pages 90-95

  Gangopadhyay, Subhashis ^a   Schmidt, Thomas ^a   Einfeldt, Sven ^a,b   Yamaguchi, Tomohiro ^a   Hommel, Detlef ^a   Falta, Jens ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Gallium nitride; InGaN QDs; Scanning Tunneling Microscopy

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

DEFECT DENSITY; IMPACT OF IONS; SAPPHIRE SUBSTRATES; SELF-ORGANIZED NANO-STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 31044442123     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2006.90     Document Type: Conference Paper

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