Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Duan, Xiangmei ^a,e   Baroni, Stefano ^a,b   Modesti, Silvio ^c,d   Peressi, Maria ^a,d  

^a DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^b SISSA   (Italy)

^c LABORATORIO TASC   (Italy)

^d UNIVERSITY OF TRIESTE   (Italy)

^e UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EMBEDDED SYSTEMS; IMAGING TECHNIQUES; SCANNING TUNNELING MICROSCOPY; SIGNAL PROCESSING; SILICON; SURFACE MEASUREMENT;

ANIONIC SITES; CROSS-SECTIONAL IMAGING; SI-DOPED GAAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 30744467403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162690     Document Type: Article

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