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Semiconductor Science and Technology

Volumn 16, Issue 1, 2001, Pages

Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe

(5) Troccoli, Mariano a Scamarcio, Gaetano a Fraboni, Beatrice b Priolo, Francesco c Gasparotto, Andrea d

a UNIVERSITY OF BARI (Italy)

b UNIVERSITY OF BOLOGNA (Italy)

c UNIVERSITY OF CATANIA (Italy)

d UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATING MATERIALS; ELECTROLUMINESCENCE; INFRARED RADIATION; ION IMPLANTATION; IRON; LUMINESCENT DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE; POSITIVE IONS; SUBSTRATES;

BAND EMISSION; DEEP LEVEL ELECTROLUMINESCENCE; MID INFRARED OPTICAL POWER; SEMI INSULATING INDIUM PHOSPHIDE LAYER; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035128364 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/1/101 Document Type: Article

Times cited : (5)

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