Pattern symmetry and CMP process simulation

Materials Research Society Symposium Proceedings

Volumn 867, Issue , 2005, Pages 293-298

  Yoshida, Takafumi ^a  

^a YNT jpCom   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY ELEMENT METHOD; COMPUTER SIMULATION; MATRIX ALGEBRA;

CHEMICAL MECHANICAL PLANARIZATION (CMP); FIELD MATRIX;

CHEMICAL MECHANICAL POLISHING;

EID: 30544440277     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-867-w6.7     Document Type: Conference Paper

References (8)

1. International Technology Roadmap for Semiconductors (2004)
2. Hermann Weyl, "Symmetry," Princeton University Press (1952)
3. T. Yoshida, "Three-Dimensional Chemical-Mechanical Polishing Process Model by BEM," Electrochem. Soc. & Jpn, Appl. Phys. Joint Internl. Meeting, Proc. 3rd Internl. Symp. CMP in IC Device Manufacturing, 593 (1999)
4. J. Sorooshian, D. DeNardis, L. Charns, Z. Li, D. Boning, F. Shadman, and A. Philipossian, "Determining The Thermal Attributes of CMP Through Controlled Removal Rate vs. Temperature Studies," CMPMIC, 43 (2003)
5. J. Luo, D. A. Dornfeld, "Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication," Springer (2004)
6. T. Yoshida, "Three-Dimensional Wafer Process Model for Nanotopography," Chemical-Mechanical Polishing, edited by Duane S. Boning, Katia Devriendt, Michael R. Oliver, David J. Stein, Ingrid Vos, Mater. Res. Soc. Symp. Proc. 767, F1.1, Warrendale, PA (2003)
7. T. Yoshida, "Pad Asperity Parameters for CMP Process Simulation," in Advances in Chemical-Mechanical Polishing, edited by Duane S. Boning, Johann W. Bartha, Ara Philipossian, Greg Shinn, and Ingrid Vos, Mater. Res. Soc. Symp. Proc. 816, K8.4, Warrendale, PA (2004)
8. nd ed.," Cambridge Press (1992)