Structure and spectroscopic properties of (AA′)(BB′)O3 mixed-perovskite crystals

Journal of Materials Research

Volumn 20, Issue 12, 2005, Pages 3329-3337

  Pawlak, Dorota A ^a   Ito, Masahiko ^b   Dobrzycki, Lukasz ^c   Wozniak, Krzysztof ^c   Oku, Masaoki ^d   Shimamura, Kiyoshi ^e   Fukuda, Tsuguo ^f  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b UNIVERSITÉ LYON 1   (France)

^c UNIVERSITY OF WARSAW   (Poland)

^d TOHOKU UNIVERSITY   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; BORON; CHEMICAL ANALYSIS; CRYSTAL GROWTH; LANTHANUM; NEODYMIUM; PEROVSKITE; STRONTIUM; TANTALUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA); MIXED-PEROVSKITE CRYSTALS; SINGLE CRYSTAL X-RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 30444457545     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2005.0412     Document Type: Article

References (26)

1. 3 single crystals as substrates for GaN epitaxial. J. Cryst. Growth 194, 209 (1998).
2. c. superconductors. J. Cryst. Growth 109, 441 (1991).
3. 3. Cryst. Res. Technol. 26, 481 (1991).
4. 3, substrate materials for superconducting thin-film device applications. J. Appl. Phys. 83, 1979 (1998).
5. J.B. Goodenough, J.-S. Zhou, T. Egami, and S.L. Cooper: Localized to Itinerant Electronic Transition in Perovskite Oxides (Springer-Verlag, Berlin, 2001).
6. 3 crystals. J. Phys. Stat. Sol. (a) 21, 95 (1974).
7. 3 single crystals. J. Phys.: Condens. Matter 5, 7893 (1993).
8. 3. Appl. Phys. A 57, 309 (1993).
9. 3 crystals. J. Lumin. 72, 157 (1997).
10. 3 as substrates for GaN epitaxial growth (RE = La, Nd). J. Cryst. Growth 235, 277 (2002).
11. 3 as substrates for GaN epitaxial growth. J. Alloys Compd. 339, 335 (2002).
12. J. Czochralski: Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle. Z. Phys. Chem. 92, 219 (1918).
13. G.M. Sheldrick: Phase annealing in SHELX-90: Direct methods for larger structures. Acta Crystallogr. A 46, 467 (1990).
14. G.M. Sheldrick: SHELXL93. Program for the Refinement of Crystal Structures (University of Göttingen, Göttingen, Germany).
15. T.L. Barr: Modern ESCA (CRC, Boca Raton, FL, 1994).
16. T.L. Barr: An XPS study of Si as it occurs in adsorbents, catalysts, and thin films. Appl. Surf. Sci. 15, 1 (1983).
17. D.A. Pawlak, K. Wozniak, Z. Frukacz, T.L. Barr, D. Fiorentino, and S. Seal: ESCA studies of yttrium aluminium garnets. J. Phys. Chem. B 103, 1454 (1999).
18. D.A. Pawlak, K. Wozniak, Z. Frukacz, T.L. Barr, D. Fiorentino, and S. Hardcastle: ESCA studies of yttrium orthoaluminium perovskites. J. Phys. Chem. B 103, 3332 (1999).
19. D.A. Pawlak, M. Ito, M. Oku, K. Shimamura, and T. Fukuda: Interpretation of XPS O(1s) in mixed oxides, proved on the mixed perovskite crystals. J. Phys. Chem. B 106(2), 504 (2002).
20. T. Barth: Die Kristallstruktur von Perowskit und Verwandten Verbindungen. Nor. Geol. Tidsskr. 8, 201 (1925).
21. 4 type. Acta Crystallogr 10, 538 (1957).
22. 7 and its structure. Acta Crystallogr. 11, 54 (1958).
23. 3 single crystal. Opt. Mater 23, 425 (2003).
24. 3 single crystals: A promising substrate for GaN epitaxial growth. Cryst. Res. Technol. 36, 851 (2001).
25. 3 single crystals. J. Cryst. Growth 236, 671 (2002).
26. R.D. Shannon: Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallogr. A 32, 751 (1976).