Effective activation of dopants using MeV ion implantation

New Diamond and Frontier Carbon Technology

Volumn 8, Issue 4, 1998, Pages 195-210

  Prawer, Steven ^a   Jamieson, David N ^a   Nugent, Kerry W ^a   Walker, Russel ^a   Uzan Saguy, Cecile ^b   Kalish, Rafi ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Defects; Doping; Ion implantation; Raman spectroscopy

Indexed keywords

EID: 3042914824     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. S. Prawer, D. N. Jamieson, R. J. Walker, K. King, F. Watt and R. Kalish: Diamond Films and Technology 6 (1996) 351.
2. H. Hofsass, M. Dalmer, M. Restle and C. Ronning: J. Appl. Phys. 81 (1997) 2566.
3. M. S. Dresselhaus and R. Kalish: Ion Implantation in diamond, graphite and related materials (Springer-Verlag, Germany, 1992).
4. R. Kalish and S. Prawer: Ion Implantation of Diamond and Diamond Films, in Handbook of Industrial Diamond and Diamond Films, Eds. M. Prelas, G. Popovici and L. K. Bigelow (Marcel Dekker, New York, 1997).
5. R. Kalish, S. Prawer, C. Uzan-Saguy, J. Adler and D. Saada: Diamond Films and Technology 6 (1996) 337.
6. C. Uzan-Saguy, C. Cyterman, R. Brener, M. Shaanan and R. Kalish: Appl. Phys. Lett. 67 (1995) 1194.
7. J. F. Prins: Physica B 185 (1993) 132, and references therein.
8. F. Fontaine, C. Uzan-Saguy, B. Philosoph and R. Kalish: Appl. Phys. Lett. 68 (1996) 2264.
9. S. Prawer, K. W Nugent and D. N. Jamieson: Diamond and Related Materials 7 (1998) 106.
10. J. Zeigler, J. P. Biersack and U. Littmark: The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
11. S. Prawer, D. N. Jamieson and R. Kalish: Phys. Rev. Lett. 69 (1992) 2991.
12. S. Prawer and R. Kalish: Phys. Rev B 51 (1995) 15711.
13. A. T. Collins: section 9.3 in Properties and Growth of Diamond, Ed. G. Davies (Inspec, London, 1994), p. 273.
14. G. Braunstein and R. Kalish: J. Appl. Phys. 54 (1983) 2106.
15. S. M. Sze: Semiconductor Devices: Physics and Technology (John Wiley and Son, New York, 1985).
16. A. T. Collins and E. C. Lightowlers: Chapter 3 in The Properties of Diamond, Ed. J. E. Field (Academic Press, London, 1979) p. 79.
17. C. Z. Wang and K. M. Ho: Phys. Rev. Lett. 71 (1993) 1184.
18. D. A. Drabold, P. A. Fedders and P. Stumm: Phys. Rev. B 49 (1994) 16415.
19. R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter and S. Prawer: Appl. Phys. Lett. 70 (1997) 999.
20. L. Y. S. Pang, S. S. M. Chan, R. Jackman, C. Johnston and P. Chalker: Appl. Phys. Lett. 70 (1997) 339.