Acceptor depletion in p-type porous silicon

Physica Status Solidi (A) Applied Research

Volumn 168, Issue 1, 1998, Pages

  Polisski, G ^a   Dollinger, G ^a   Bergmaier, A ^a   Kovalev, D ^a   Heckler, H ^a   Koch, F ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON; CARBON; CRYSTALS; DOPING (ADDITIVES); ETCHING; FLUORINE; HYDROGEN; OXYGEN; PASSIVATION; POROSITY; SURFACES;

ACCEPTOR DEPLETION; ANODIC ETCHING; ELASTIC RECOIL DETECTION; VOLUME TO SURFACE RATIO;

POROUS SILICON;

EID: 0032119894     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199807)168:13.0.CO;2-4     Document Type: Article

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