An a-Si:H vacuum-compatible photoresist process for fabricating device structures in HgCdTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 689-693

  Hollingsworth, R E ^a   Dehart, C ^a   Wang, Li ^a   Johnson, J N ^b   Benson, J D ^c   Dinan, J H ^c  

^a Materials Research Group Inc   (United States)

^b E OIR Measurements Inc   (United States)

^c NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

Dry processing; HgCdTe; Pattern transfer

Indexed keywords

EID: 3042776178     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0037-z     Document Type: Article

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