Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

Applied Physics Letters

Volumn 69, Issue 20, 1996, Pages 3013-3015

  Mullenborn M ^a   Birkelund, K ^a   Grey, F ^a   Madsen, S ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b DME Danish Micro Engineering A/S   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000862625     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116823     Document Type: Article

References (14)

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12. First-principle density functional calculations show that there are no surface states in the band gap for fully hydrogen-passivated crystalline silicon surfaces [K. Stockbro (private communication)]. Also hydrogenated a-Si, which has been studied in detail and which is similar to hydrogen-passivated a-Si, does not show distinct absorption bands in the band gap [G. D. Cody, in Hydrogenated Amorphous Silicon, Part B, Optical Properties, edited by J. I. Pankove, Semiconductors and Semimetals, Vol. 21, edited by R. K. Willardson and A. C. Beer (Academic, Orlando, 1984), p. 11].
13. First-principle density functional calculations show that there are no surface states in the band gap for fully hydrogen-passivated crystalline silicon surfaces [K. Stockbro (private communication)]. Also hydrogenated a-Si, which has been studied in detail and which is similar to hydrogen-passivated a-Si, does not show distinct absorption bands in the band gap [G. D. Cody, in Hydrogenated Amorphous Silicon, Part B, Optical Properties, edited by J. I. Pankove, Semiconductors and Semimetals, Vol. 21, edited by R. K. Willardson and A. C. Beer (Academic, Orlando, 1984), p. 11].
14. K. Birkelund, M. Müllenborn, S. Madsen, and F. Grey, Superlatt. Microstructure (to be published).