Uniformity and reproducibility studies of low-pressure-grown Cd0.90Zn0.10Te crystalline materials for radiation detectors

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 796-802

  Terterian, S ^a   Chu, M ^a   Ting, D ^a   Wu, L C ^a   Wang, C C ^a   Szawlowski, M ^b   Vissor, G ^c   Luke, P N ^d  

^a Fermionics Corporation   (United States)

^b Advanced Photonix Inc   (United States)

^c Durham Scientific Crystals Ltd   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Bridgman growth; CdZnTe; Gamma ray detectors

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; GAMMA RAYS; RADIATION DETECTORS;

BRIDGMAN GROWTH;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0041766139     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0073-7     Document Type: Conference Paper

References (1)

1. M. Chu, S. Terterian, D. Ting, C.C. Wang, H. Gurgenian, and S. Mesropian, Appl. Phys. Lett. 79, 2728 (2001).