Room-temperature ferromagnetism in ion-implanted Co-doped TiO 2(110) rutile

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4466-4468

  Shutthanandan, V ^a   Thevuthasan, S ^a   Heald, S M ^a   Droubay, T ^a   Engelhard, M H ^a   Kaspar, T C ^a   McCready, D E ^a   Saraf, L ^a   Chambers, S A ^a   Mun, B S ^b   Hamdan, N ^b   Nachimuthu, P ^b   Taylor, B ^c   Sears, R P ^c   Sinkovic, B ^c  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS (DMS); REMANENT MAGNETIZATION; ROOM TEMPERATURE; SPINTRONICS;

ELECTRIC CONDUCTIVITY; FERROMAGNETISM; HYSTERESIS; ION IMPLANTATION; MAGNETIZATION; MAGNETOMETERS; REMANENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

TITANIUM DIOXIDE;

EID: 3042737337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753652     Document Type: Article

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