An impedance-phase angle (Z-theta) method for capacitance extraction of ultra-thin gate dielectrics at intermediate frequency

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2004, Pages 289-292

  Lin, Joyce ^a   Chang, Chien Hwa ^a   Prasad, Sharad ^a   Loh, William ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INDUCTANCE; LEAKAGE CURRENTS;

GATE CAPACITANCE; LEAST SQUARE OPTIMIZER; PARASITIC EFFECTS;

GATES (TRANSISTOR);

EID: 3042654614     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. J. Yang et al.," MOS capacitance measurements for high-leakage thin dielectrics," IEEE Trans. Electron. Dev, vol 46, pp 1500-1501, July 19999.
2. Nara et al,. "Applicability limits of the Two-frequency capacitance measurement technique for thickness extraction of ultra-thin gate oxide" IEEE transactions on semiconductor manufacturing, vol 15, NO 2, May 2002.
3. H. T. Lue, "An Improved Two-Frequency Method of Capacitance Measurement for SrTiO3 as High-k Gate Dielectric, IEEE Electron Device Letters, vol 23, NO 9, September 2002.
4. J. Hauser, CVC NCSU CV analysis program
5. Yasushi Okawa et. al. "The Negative Capacitance Effects of the C-V measurement of Ultra Thin Gate Dielectrics Induced by Stray Capacitance of the Measurement System" ICMTS 03-197