Nanoscale modification of electrical properties of hydrogenated boron-doped diamond

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 7, 2004, Pages 1537-1542

  Andrienko, I ^a   Prawer, S ^a   Kalish, R ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON EMISSION; HYDROGENATION; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

ANODIZATION; DISPLACEMENT VOLTAGE (S-V) TECHNIQUE; SCANNING PROBE MICROSCOPY (SPM); SURFACE BONDS;

DIAMONDS;

EID: 3042639776     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306793     Document Type: Article

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