Impact of off-state leakage current on electromigration design rules for nanometer scale CMOS technologies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 74-78

  Lin, Sheng Chih ^a   Basu, Anirban ^a   Keshavarzi, Ali ^b   De, Vivek ^b   Mehrotra, Amit ^c   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b INTEL RESEARCH   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JOULE HEATING; JUNCTION TEMPERATURE; LEAKAGE DOMINANT TECHNOLOGIES; TEMPERATURE RISE EQUATIONS;

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTROMIGRATION; ENERGY DISSIPATION; LEAKAGE CURRENTS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 3042615078     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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