Electronic properties of low-field-emitting ultrananocrystalline diamond films

Surface and Interface Analysis

Volumn 36, Issue 5-6 SPEC. ISS., 2004, Pages 449-454

  Frolov, V D ^a   Pimenov, S M ^a   Konov, V I ^a   Polyakov, V I ^b   Rukovishnikov, A I ^b   Rossukanyi, N M ^b   Carlisle, J A ^c   Gruen, D M ^c  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Correlations; Diamond films; Electronic properties; Nanostructures

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIAMOND FILMS; DOPING (ADDITIVES); NANOSTRUCTURED MATERIALS; NITROGEN COMPOUNDS; POINT DEFECTS; SCANNING; SILICON COMPOUNDS; SUBSTRATES; THICKNESS CONTROL;

ELECTROCONDUCTIVITY; FILM SURFACES; LOW-FIELD ELECTRON EMISSION; ULTRANANOCRYSTALLINE;

ELECTRONIC PROPERTIES;

EID: 3042565259     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1709     Document Type: Conference Paper

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