Field emission study of titanium suicide array

Surface and Interface Analysis

Volumn 36, Issue 5-6 SPEC. ISS., 2004, Pages 435-438

  Choi, Seong S ^a   Jung, M Y ^a   Joo, M S ^a   Kim, D W ^a   Park, M J ^b   Kim, S B ^c   Jeon, H T ^c  

^a SunMoon University   (South Korea)

^b Korea Military Academy   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

FEA; Field emission; Stability; TiSi2; Wet etching

Indexed keywords

ANISOTROPY; ANNEALING; CURRENT DENSITY; DEPOSITION; ELECTRIC POTENTIAL; ETCHING; FABRICATION; SILICA; SILICON WAFERS; STABILITY; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EMISSION STABILITY; FIELD EMITTER ARRAY (FEA); THERMOCHEMICAL DURABILITY; TITANIUM SILICIDE;

FIELD EMISSION DISPLAYS;

EID: 3042559794     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1715     Document Type: Conference Paper

References (6)

1. Spindt CA, Holland CE, Rosenberg A, Brodie I. IEEE Trans. Electron Dev. 1991; 38:2355.
2. Marcus RB, Ravi TS, Gmitter T, Busta HH, Niccum JT, Chin KK, Liu D. IEEE Trans. Electron Dev. 1991; 38: 2289.
3. Lim MS, Park CM, Han MK, Choi YI. J. Vac. Sci. Technol. B 1999; 17: 635.
4. Wang CC, Ku TK, Hsieh LJ, Cheng HC. Jpn. J. Appl. Phys. 1996; 35: 3681.
5. Kovacs GTA, Maluf NI, Petersen KE. Proc. IEEE 1998; 86: 1536.
6. Muraka SP, Fraser DB. J. Appl. Phys. 1980; 51: 342.