Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Lv, P C ^a   Zhang, X ^a   Kolodzey, J ^a   Powell, A ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR SITES; DOPANT TRANSITIONS;

DOPING (ADDITIVES); NITROGEN; PUMPING (LASER); SILICON CARBIDE;

LIGHT EMISSION;

EID: 30344476131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2142294     Document Type: Article

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