Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films

Thin Solid Films

Volumn 497, Issue 1-2, 2006, Pages 185-188

  Park, E R ^a   Lee, Cheol Eui ^a   Yeom, S J ^b  

^a Korea University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Ferroelectric properties; Plasma processing and deposition

Indexed keywords

BISMUTH COMPOUNDS; DECOMPOSITION; FERROELECTRICITY; LANTHANUM; OXYGEN; PLASMA APPLICATIONS; SUBSTITUTION REACTIONS;

FERROELECTRIC PROPERTIES; ORGANIC DECOMPOSITION; OXYGEN-PLASMA TREATMENT; PLASMA PROCESSING AND DEPOSITION;

FERROELECTRIC THIN FILMS;

EID: 30344474918     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.146     Document Type: Article

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