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Volumn 287, Issue 2, 2006, Pages 468-471
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Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems
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Author keywords
A3. Multiple quantum barrier; A3. Multiple quantum well; B2. Semiconductor ternary compound; B3. Light emitting diodes
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Indexed keywords
CRYSTALLIZATION;
HETEROJUNCTIONS;
LIGHT EMITTING DIODES;
MICROSTRUCTURE;
NANOSTRUCTURED MATERIALS;
QUANTUM THEORY;
SPECTRUM ANALYZERS;
CRYSTALLINE RANDOMIZATION;
MULTIPLE QUANTUM BARRIER;
MULTIPLE QUANTUM WELL;
SEMICONDUCTOR TERNARY COMPOUND;
SEMICONDUCTOR MATERIALS;
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EID: 30344447990
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.068 Document Type: Conference Paper |
Times cited : (14)
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References (12)
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