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Volumn 287, Issue 2, 2006, Pages 468-471

Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Author keywords

A3. Multiple quantum barrier; A3. Multiple quantum well; B2. Semiconductor ternary compound; B3. Light emitting diodes

Indexed keywords

CRYSTALLIZATION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SPECTRUM ANALYZERS;

EID: 30344447990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.068     Document Type: Conference Paper
Times cited : (14)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.