Quantitative analysis of the Ge concentration in a SiGe quantum well: Comparison of low-energy RBS and SIMS measurements

Analytical and Bioanalytical Chemistry

Volumn 384, Issue 2, 2006, Pages 525-530

  Krecar, D ^a   Rosner, M ^a   Draxler, M ^b   Bauer, P ^b   Hutter, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Convolution (02.60.Ed); Ge layer (68.18. g, 68.47.Pe); Low energy Rutherford backscattering RBS (82.80.Yc); Quantum well (73.21.Fg); Secondary ion mass spectrometry SIMS (68.49.Sf, 82.80.Ms)

Indexed keywords

CHEMICAL ANALYSIS; CONCENTRATION (PROCESS); MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DEPTH RESOLUTION; GE Δ LAYER; PRIMARY ENERGY; TILT ANGLE;

GERMANIUM;

SIGE;

EID: 29544435302     PISSN: 16182642     EISSN: 16182650     Source Type: Journal    
DOI: 10.1007/s00216-005-0215-2     Document Type: Article

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