Study of the structural transformation of Ge2Sb 2Te5 induced by current pulse in phase change memory

Materials Research Society Symposium - Proceedings

Volumn 803, Issue , 2003, Pages 89-94

  Zhao, Rong ^a   Chong, Tow Chong ^a   Shi, Lu Ping ^a   Tan, Pik Kie ^a   Meng, Hao ^b   Hu, Xiang ^a   Li, Ke Bin ^a   Du, An Yan ^c  

^a DATA STORAGE INSTITUTE   (Singapore)

^b UNIVERSITY OF MINNESOTA   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON DIFFRACTION; RAMAN SPECTROSCOPY; STRUCTURAL ANALYSIS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVE LAYERS; PHASE CHANGE MEMORY (PCM); SELECTED AREA ELECTRON DIFFRACTION (SAD); STRUCTURAL TRANSFORMATIONS;

GERMANIUM COMPOUNDS;

EID: 2942733383     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-803-hh1.5     Document Type: Conference Paper

References (8)

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