SCOPUS 정보 검색 플랫폼

Volumn 81, Issue 1-3, 2001, Pages 127-131

Annealing behavior of luminescence from erbium-implanted GaN films

(10) Zavada, J M a Ellis, C J b Lin, J Y b Jiang, H X b Seo, J T c Hommerich U c Thaik, M c Wilson, R G d Grudowski, P A e Dupuis, R D e

a ARL European Research Office (United Kingdom)

b KANSAS STATE UNIVERSITY (United States)

c HAMPTON UNIVERSITY (United States)

d Stevenson Ranch (United States)

e UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

Erbium; GaN; Ion implantation; Photoluminescence

Indexed keywords

ANNEALING; ERBIUM; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

BANDEDGE PHOTOLUMINESCENCE; GALLIUM NITRIDES; INFRARED LUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0035942388 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00689-9 Document Type: Article

Times cited : (10)

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