Characterization and modeling of InGaP HBT low-frequency oscillations

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 1033-1036

  Burton, Richard S ^a   Dai, Peter ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Bipolar junction transistor (BJT); Electrothermal effects; HBT; Heterojunction bipolar transistors (HBTs); InGaP; Power amplifiers; Power bipolar transistors; Safe operating area; Semiconductor device thermal factors; Vertical bipolar intercompany (VBIC)

Indexed keywords

CHARACTERIZATION; CIRCUIT OSCILLATIONS; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

ELECTROTHERMAL EFFECTS; INDIUM GALLIUM PHOSPHIDE TRANSISTOR; LOW FREQUENCY OSCILLATIONS; SAFER OPERATING AREA; VERTICAL BIPOLAR INTERCOMPANY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2942668252     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829521     Document Type: Article

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